important notice dear customer, as from october 1st, 2006 philips semiconductors has a new trade name - nxp semiconductors, which will be used in future data sheets together with new contact details. in data sheets where the previous philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (internet) sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com (email) the copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - ? koninklijke philips electronics n.v. (year). all rights reserved - is replaced with: - ? nxp b.v. (year). all rights reserved. - if you have any questions related to the data sheet, please contact our nearest sales of?ce via e-mail or phone (details via salesaddresses@nxp.com). thank you for your cooperation and understanding, nxp semiconductors BF908; BF908r dual-gate mos-fets rev. 03 14 november 2007 product data sheet
nxp semiconductors product speci?cation dual-gate mos-fet s BF908; BF908r fea tures high forward transfer admittance short channel transistor with high forward transfer admittance to input capacitance ratio low noise gain controlled amplifier up to 1 ghz. applica tions vhf and uhf applications with 12 v supply voltage, such as television tuners and professional communications equipment. description depletion type field-effect transistor in a plastic microminiature sot143 or sot143r package. the transistors are protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. pinning caution the device is supplied in an antistatic package. the gate-source input must be protected against static discharge during transport or handling. pin symbol description 1 s, b source 2 d drain 3g 2 gate 2 4g 1 gate 1 fig.1 simplified outline (sot143) and symbol; BF908. handbook, halfpage s,b d g 1 g 2 43 2 1 top view BF908 marking code: %m1. mam039 fig.2 simplified outline (sot143r) and symbol; BF908r. handbook, halfpage s,b d g 1 g 2 mam040 34 1 2 top view BF908r marking code: %m2. quick reference data symbol parameter conditions min. typ. max. unit v ds drain-source voltage -- 12 v i d drain current -- 40 ma p tot total power dissipation -- 200 mw t j operating junction temperature -- 150 c ? y fs ? forward transfer admittance 36 43 50 ms c ig1-s input capacitance at gate 1 2.4 3.1 4 pf c rs reverse transfer capacitance f = 1 mhz 20 30 45 pf f noise ?gure f = 800 mhz - 1.5 2.5 db 2 of 9 rev. 03 - 14 november 2007
nxp semiconductors product speci?cation dual-gate mos-fet s BF908; BF908r limiting v alues in accordance with the absolute maximum rating system (iec 134). note 1. device mounted on a printed-circuit board. symbol p arameter conditions min. max. unit v ds drain-source voltage - 12 v i d drain current - 40 ma i g1 gate 1 current - 10 ma i g2 gate 2 current - 10 ma p tot total power dissipation see fig.3; note 1 BF908 up to t amb =5 0 c - 200 mw BF908r up to t amb =4 0 c - 200 mw t stg storage temperature - 65 +150 c t j operating junction temperature - 150 c fig.3 power derating curves. handbook, halfpage 0 50 100 150 200 250 0 50 100 150 200 BF908 BF908r p tot (mw) t amb ( c) o mrc275 3 of 9 rev. 03 - 14 november 2007
nxp semiconductors product speci?cation dual-gate mos-fet s BF908; BF908r thermal characteristics note 1. device mounted on a printed-circuit board. st a tic characteristics t j =2 5 c; unless otherwise speci?ed. dynamic characteristics common source; t amb =2 5 c; v ds =8v ; v g2-s =4v ; i d = 1 5 ma; unless otherwise speci?ed. symbol p arameter conditions v alue unit r th j-a thermal resistance from junction to ambient note 1 BF908 500 k/w BF908r 550 k/w symbol p arameter conditions min. typ . max. unit v (br)g1-ss gate 1-source breakdown voltage v g2-s =v ds = 0; i g1-s =1 0m a 8 - 20 v v (br)g2-ss gate 2-source breakdown voltage v g1-s =v ds = 0; i g2-s =1 0m a 8 - 20 v - v (p)g1-s gate 1-source cut-of f voltage v g2-s =4v ; v ds =8v ; i d =2 0 m a -- 2v - v (p)g2-s gate 2-source cut-of f voltage v g1-s =4v ; v ds =8v ; i d =2 0 m a -- 1.5 v i dss drain-source current v g2-s =4v ; v ds =8v ; v g1-s = 0 3 1 52 7m a i g1-ss gate 1 cut-of f current v g2-s =v ds = 0; v g1-s =5v -- 50 na i g2-ss gate 2 cut-of f current v g1-s =v ds = 0; v g2-s =5v -- 50 na symbol p arameter conditions min. typ . max. unit ? y fs ? forward transfer admittance pulsed; t j =2 5 c; f = 1 mhz 36 43 50 ms c ig1-s input capacitance at gate 1 f = 1 mhz 2.4 3.1 4 p f c ig2-s input capacitance at gate 2 f = 1 mhz 1.2 1.8 2.5 pf c os output capacitance f = 1 mhz 1.2 1.7 2.2 pf c rs reverse transfer capacitance f = 1 mhz 20 30 45 ff f noise ?gure f = 200 mhz; g s = 2 ms; b s =b sopt - 0.6 1.2 db f = 800 mhz; g s =g sopt ; b s =b sopt - 1.5 2.5 db 4 of 9 rev. 03 - 14 november 2007
nxp semiconductors product speci?cation dual-gate mos-fet s BF908; BF908r fig.4 transfer characteristics; typical values. v ds = 8 v; t j =25 c. handbook, halfpage - 0.6 - 0.4 0 0.2 - 0.2 0.4 v g1-s (v) 3 v 2 v 1.5 v 0.5 v 0 v 0.6 40 30 10 0 20 mrc281 v g2-s = 4 v 1 v i d
(ma) fig.5 output characteristics; typical values. v g2-s = 4 v; t j =25 c. handbook, halfpage 048 16 30 10 0 20 mrc282 12 v ds (v) i d
(ma) 0.2 v 0.1 v 0 v - 0.3 v - 0.2 v - 0.1 v v g1-s = 0.3 v fig.6 forward transfer admittance as a function of drain current; typical values. v ds = 8 v; t j =25 c. 0 10 20 30 40 50 0 5 10 15 20 25 0.5 v 1 v 1.5 v 2 v 3 v 4 v v g2-s = 0 v y fs (ms) i d (ma) mrc280 fig.7 forward transfer admittance as a function of junction temperature; typical values. 0 20 40 60 0 40 80 120 160 40 y fs (ms) t j ( c) o mrc276 v ds = 8 v; v g2-s = 4 v; i d =15ma. 5 of 9 rev. 03 - 14 november 2007
nxp semiconductors product speci?cation dual-gate mos-fet s BF908; BF908r t able 1 scattering parameters t able 2 noise data f (mhz) s 11 s 21 s 12 s 22 magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) v ds =8v ; v g2-s =4v ; i d = 1 0 ma; t amb =2 5 c. 50 0.998 - 5.1 3.537 173.5 0.001 98.2 0.996 - 2.4 100 0.994 - 10.4 3.502 167.7 0.001 88.8 0.994 - 4.9 200 0.979 - 20.8 3.450 154.9 0.003 74.6 0.987 - 9.5 300 0.962 - 30.3 3.318 143.7 0.004 69.5 0.983 - 13.9 400 0.939 - 40.1 3.234 131.9 0.005 65.6 0.980 - 18.5 500 0.914 - 49.1 3.093 120.7 0.006 64.4 0.974 - 22.8 600 0.892 - 57.1 2.912 1 1 1.1 0.005 63.1 0.969 - 27.0 700 0.865 - 64.4 2.774 101.0 0.005 65.2 0.966 - 31.2 800 0.837 - 71.6 2.616 91.4 0.004 70.8 0.965 - 35.4 900 0.81 1 - 78.1 2.479 81.9 0.004 87.4 0.965 - 39.4 1 000 0.785 - 84.5 3.329 72.5 0.003 108.0 0.966 - 43.7 v ds =8v ; v g2-s =4v ; i d = 1 5 ma; t amb =2 5 c. 50 0.998 - 5.3 3.983 173.4 0.001 95.5 0.994 - 2.4 100 0.994 - 10.9 3.943 167.5 0.001 93.6 0.991 - 5.0 200 0.976 - 21.6 3.878 154.7 0.003 74.3 0.984 - 9.7 300 0.957 - 31.7 3.722 143.3 0.004 70.0 0.979 - 14.2 400 0.934 - 41.7 3.614 131.6 0.005 63.5 0.975 - 18.8 500 0.907 - 51.1 3.446 120.4 0.006 62.2 0.969 - 23.2 600 0.885 - 59.1 3.240 1 10.9 0.005 59.6 0.964 - 27.4 700 0.851 - 66.8 3.072 100.9 0.005 64.8 0.961 - 31.6 800 0.826 - 73.9 2.891 91.3 0.004 67.8 0.959 - 35.9 900 0.797 - 80.7 2.733 81.9 0.004 85.0 0.958 - 40.0 1 000 0.773 - 87.0 2.569 72.8 0.004 102.9 0.958 - 44.2 f (mhz) f min (db) g opt r n (ratio) (deg) v ds =8v ; v g2-s =4v ; i d = 1 0 ma; t amb =2 5 c. 800 1.50 0.720 56.7 0.580 v ds =8v ; v g2-s =4v ; i d = 1 5 ma; t amb =2 5 c. 800 1.50 0.700 59.2 0.520 6 of 9 rev. 03 - 14 november 2007
nxp semiconductors product speci?cation dual-gate mos-fet s BF908; BF908r p ackage outlines fig.8 sot143. dimensions in mm. handbook, full pagewidth mbc845 10
max o 10
max o 30
max o 1.1
max 0.75
0.60 0.150
0.090 0.1
max 43 2 m 0.1 ab 0
0.1 0.48 top view 1.4
1.2 2.5
max 3.0
2.8 m 0.2 ab a b 1.9 1 0
0.1 0.88 1.7 fig.9 sot143r. dimensions in mm. handbook, full pagewidth mbc844 10
max o 10
max o 30
max o 1.1
max 0.40
0.25 0.150
0.090 0.1
max 34 2 1.4
1.2 2.5
max 3.0
2.8 a b 1.9 m 0.2 a 1 m 0.1 b top view 0.48
0.38 0.88
0.78 1.7 7 of 9 rev. 03 - 14 november 2007
nxp semiconductors BF908; BF908r dual-gate mos-fets legal information data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term short data sheet is explained in section de?nitions. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple dev ices. the latest product status information is available on the internet at url http://www .nxp .com . de?nitions draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modi?cations or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local nxp semiconductors sales of?ce. in case of any inconsistency or con?ict with the short data sheet, the full data sheet shall prevail. disclaimers general information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes nxp semiconductors reserves the right to make changes to information published in this document, including without limitation speci?cations and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. applications applications that are described herein for any of these products are for illustrative purposes only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. limiting values stress above one or more limiting values (as de?ned in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale nxp semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www .nxp .com/pro? le/ter ms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or con?ict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. contact information for additional information, please visit: http://www .nxp.com for sales of?ce addresses, send an email to: salesad dresses@nxp.com document status [1] [2] product status [3] de?nition objective [short] data sheet development this document contains data from the objective speci?cation for product development. preliminary [short] data sheet quali?cation this document contains data from the preliminary speci?cation. product [short] data sheet production this document contains the product speci?cation. 8 of 9 rev. 03 - 14 november 2007
nxp semiconductors BF908; BF908r dual-gate mos-fets ? nxp b.v. 2007. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 14 november 2007 document identifier: BF908-r_n_3 please be aware that important notices concerning this document and the product(s) described herein, have been included in section legal information. revision history revision history document id release date data sheet status change notice supersedes BF908-r_n_3 20071114 product data sheet - BF908-r_2 modi?cations: ? fig. 1 and 2 on page 2; figure note changed BF908-r_2 19960730 product speci?cation - BF908r_1 BF908r_1 - - - -
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